US Patent 10985524 High-power hybrid silicon-photonics laser

An optoelectronic device includes a silicon substrate, with a silicon waveguide layer disposed over the silicon substrate and including an optical waveguide. One or more through-silicon vias (TSVs) extend through the silicon substrate and contact the silicon waveguide layer. A III-V base layer is disposed over the silicon waveguide layer, and an optical amplifier is disposed on the III-V base layer and optically coupled to the optical waveguide.