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US Patent 10861676 Metal recess for semiconductor structures

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Infobox
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=108616760
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Infobox
Is a
Patent
Patent
0
Patent Applicant
Applied Materials
Applied Materials
0
Current Assignee
Applied Materials
Applied Materials
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
108616760
Date of Patent
December 8, 2020
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Patent Application Number
159124040
Date Filed
March 5, 2018
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=108616760
Patent Citations
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US Patent 10026621 SiN spacer profile patterning
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US Patent 10032606 Semiconductor processing with DC assisted RF power for improved control
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US Patent 10043674 Germanium etching systems and methods
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US Patent 10043684 Self-limiting atomic thermal etching systems and methods
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US Patent 10049891 Selective in situ cobalt residue removal
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US Patent 10062578 Methods for etch of metal and metal-oxide films
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US Patent 10062579 Selective SiN lateral recess
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US Patent 10062585 Oxygen compatible plasma source
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US Patent 10062587 Pedestal with multi-zone temperature control and multiple purge capabilities
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US Patent 10083830 Substrate cleaning method for removing oxide film
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US Patent 10121689 Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
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US Patent 10147620 Bolted wafer chuck thermal management systems and methods for wafer processing systems
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US Patent 10147736 Semiconductor memory device and method for manufacturing same
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US Patent 10256079 Semiconductor processing systems having multiple plasma configurations
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US Patent 10269541 Workpiece processing chamber having a thermal controlled microwave window
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US Patent 10319600 Thermal silicon etch
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US Patent 10319739 Accommodating imperfectly aligned memory holes
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US Patent 10354843 Chemical control features in wafer process equipment
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Patent Primary Examiner
‌
Jeremy Carroll
0
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