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US Patent 10811256 Method for etching a carbon-containing feature

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
October 16, 2018
Date of Patent
October 20, 2020
Patent Application Number
16161744
Patent Citations
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US Patent 10319588 Method for depositing a metal chalcogenide on a substrate by cyclical deposition
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US Patent 10435790 Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
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US Patent 10468244 Precursors and flowable CVD methods for making low-K films to fill surface features
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US Patent 10483154 Front-end-of-line device structure and method of forming such a front-end-of-line device structure
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10018920 Lithography patterning with a gas phase resist
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
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US Patent 10032792 Semiconductor device and manufacturing method thereof
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US Patent 10043661 Method for protecting layer by forming hydrocarbon-based extremely thin film
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US Patent 10047435 Dual selective deposition
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10811256
Patent Primary Examiner
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Lan Vinh

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