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US Patent 10763139 Vacuum transfer module and substrate processing apparatus

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Tokyo Electron
Tokyo Electron
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Date Filed
May 23, 2018
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Date of Patent
September 1, 2020
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Patent Applicant
Tokyo Electron
Tokyo Electron
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Patent Application Number
15987519
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Patent Citations Received
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US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
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US Patent 11289326 Method for reforming amorphous carbon polymer film
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US Patent D947913 Susceptor shaft
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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
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US Patent 11242598 Structures including metal carbide material, devices including the structures, and methods of forming same
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US Patent 11244825 Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
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US Patent 11001925 Substrate processing apparatus
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US Patent 11004977 Method for depositing a group IV semiconductor and related semiconductor device structures
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US Patent 11015245 Gas-phase reactor and system having exhaust plenum and components thereof
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US Patent 11018002 Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10763139
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Patent Primary Examiner
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Jonathan Snelting
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