US Patent 10662525 Thin film deposition apparatus

edited on 29 Jul, 2023

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Patent Citations Received

US Patent 11450529 Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Edits on 22 May, 2023

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https://pdfpiw.uspto.gov/.piw?Docid=1066252500

edited on 22 May, 2023

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Official Website

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edited on 29 Apr, 2023

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Patent Citations Received

Edits on 28 Apr, 2023

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edited on 28 Apr, 2023

Infobox

Patent Citations Received

US Patent 11450529 Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

"update citations for inverse infoboxes"

edited on 28 Apr, 2023

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Patent Citations Received

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

Edits on 25 Apr, 2023

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edited on 25 Apr, 2023

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Patent Citations Received

Edits on 23 Apr, 2023

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United States Patent and Trademark Office

edited on 23 Apr, 2023

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Is a

Patent

Patent Jurisdiction

Patent Number

106625250

Date of Patent

May 26, 2020

Patent Application Number

152024680

Date Filed

July 5, 2016

Official Website

https://pdfpiw.uspto.gov/.piw?Docid=106625250

Patent Citations Received

US Patent 11286558 Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

US Patent 11450529 Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Patent Primary Examiner

Matthew J Song

Edits on 22 Apr, 2023

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edited on 22 Apr, 2023

Infobox

Patent Citations Received

Edits on 26 Mar, 2023

"update citations for inverse infoboxes"

edited on 26 Mar, 2023

Infobox

Patent Citations Received

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

Edits on 26 Sep, 2022

"Entity importer update"

United States Patent and Trademark Office

edited on 26 Sep, 2022

Infobox

Is a

Patent

Patent Jurisdiction

Patent Number

106625250

Date of Patent

May 26, 2020

Patent Application Number

152024680

Date Filed

July 5, 2016

Official Website

https://pdfpiw.uspto.gov/.piw?Docid=106625250

Patent Citations Received

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

US Patent 11450529 Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Patent Primary Examiner

Matthew J Song

"update citations for inverse infoboxes"

edited on 26 Sep, 2022

Infobox

Patent Citations Received

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

Edits on 23 Sep, 2022

"update citations for inverse infoboxes"

edited on 23 Sep, 2022

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Patent Citations Received

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edited on 21 Sep, 2022

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Patent Citations Received

US Patent 11450529 Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Edits on 8 Jun, 2022

"Entity importer update"

https://pdfpiw.uspto.gov/.piw?Docid=10662525

edited on 8 Jun, 2022

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Website URL

Edits on 7 Apr, 2022

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edited on 7 Apr, 2022

Edits made to:

Infobox (+1 properties)

Infobox

Patent citations received

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

"update inverses"

edited on 6 Apr, 2022

Edits made to:

Infobox (+1 properties)

Infobox

Patent citations received

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

Edits on 6 Apr, 2022

"update inverses"

edited on 6 Apr, 2022

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Patent citations received

Edits on 30 Mar, 2022

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edited on 30 Mar, 2022

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Patent citations received

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Patent citations received

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