Patent attributes
A substrate processing apparatus includes a process chamber including a process space configured to accommodate a substrate; a substrate support part including a substrate mounting stand; a first gas supply part; a second gas supply part; a gas introduction port configured to introduce a gas from the first gas supply part or the second gas supply part; a gas rectifying part including an opening through which the gas introduced from the gas introduction port passes; a gas flow passage communicated with the opening and formed between the gas rectifying part and an outer periphery of the substrate mounting stand in a circumferential direction; a gas pressure equalizing part including at least two gas pressure equalizing spaces; a purge gas supply part configured to supply different amount of a purge gas to each of the at least two gas pressure equalizing spaces; and a conductance adjustment part.
