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US Patent 10190214 Deposition apparatus and deposition system having the same

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

July 12, 2016

Date of Patent

January 29, 2019

Patent Application Number

15208114

Patent Citations Received

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

US Patent 11289326 Method for reforming amorphous carbon polymer film

US Patent D947913 Susceptor shaft

US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

US Patent 11230766 Substrate processing apparatus and method

US Patent 11232963 Substrate processing apparatus and method

US Patent 11233133 NbMC layers

US Patent 10720331 Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

US Patent 10767789 Diaphragm valves, valve components, and methods for forming valve components

US Patent 10787741 Method and system for in situ formation of gas-phase compounds

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Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

Joseph A Miller, Jr.

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