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US Patent 10069443 Dechuck control method and plasma processing apparatus

Patent 10069443 was granted and assigned to Tokyo Electron on September, 2018 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Tokyo Electron
Tokyo Electron
Current Assignee
Tokyo Electron
Tokyo Electron
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10069443
Date of Patent
September 4, 2018
Patent Application Number
13719509
Date Filed
December 19, 2012
Patent Citations Received
‌
US Patent 12094694 Substrate processing apparatus and substrate processing method
0
Patent Primary Examiner
‌
Sylvia MacArthur
Patent abstract

A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

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