US Patent 10056145 Resistive memory transition monitoring
Patent 10056145 was granted and assigned to Infineon Technologies on August, 2018 by the United States Patent and Trademark Office.
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Patent abstract
A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.
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Patent Inventor Names
Giacomo Curatolo0
Jens Rosenbusch0
Ulrich Backhausen0
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US Patent 10056145 Resistive memory transition monitoring
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Patent applicant
Current assignee
Patent jurisdiction
Patent number
10056145
Date of patent
August 21, 2018
Patent application number
15447466
Date Filed
March 2, 2017
Patent primary examiner
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