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US Patent 10056145 Resistive memory transition monitoring

Patent 10056145 was granted and assigned to Infineon Technologies on August, 2018 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Infineon Technologies
Infineon Technologies
Current Assignee
Infineon Technologies
Infineon Technologies
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10056145
Patent Inventor Names
Giacomo Curatolo0
Jens Rosenbusch0
Ulrich Backhausen0
Date of Patent
August 21, 2018
Patent Application Number
15447466
Date Filed
March 2, 2017
Patent Citations Received
‌
US Patent 11942144 In-memory computation system with drift compensation circuit
0
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US Patent 10311955 Resistive memory transition monitoring
‌
US Patent 11894052 Compensated analog computation for an in-memory computation system
0
Patent Primary Examiner
‌
Leon Viet Q Nguyen
Patent abstract

A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.

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