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US Patent 11894052 Compensated analog computation for an in-memory computation system

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
118940520
Patent Inventor Names
Antonio Gnudi0
Marcella Carissimi0
Eleonora Franchi Scarselli0
Marco Pasotti0
Paolo Romele0
Andrea Lico0
Alessio Antolini0
Date of Patent
February 6, 2024
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Patent Application Number
177189080
Date Filed
April 12, 2022
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Patent Citations
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US Patent 8953360 Apparatus and method for reading a phase-change memory cell
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US Patent 9396795 Storage device supporting logical operations, methods and storage medium
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US Patent 9508446 Temperature compensated reverse current for memory
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US Patent 9859008 Control circuit, peripheral circuit, semiconductor memory device and method of operating the same
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US Patent 9887011 Memory with controlled bit line charging
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US Patent 10056145 Resistive memory transition monitoring
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US Patent 10073733 System and method for in-memory computing
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US Patent 10319449 Memory device and operation method thereof
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...
Patent Primary Examiner
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Jason Lappas
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CPC Code
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G11C 16/06
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Patent abstract

An in-memory computation (IMC) circuit includes a memory array formed by memory cells arranged in row-by-column matrix. Computational weights for an IMC operation are stored in the memory cells. Each column includes a bit line connected to the memory cells. A biasing circuit is connected between each bit line and a corresponding column output. A column combining circuit combines and integrates analog signals at the column outputs of the biasing circuits. Each biasing circuit operates to apply a fixed reference voltage level to its bit line. Each biasing circuit further includes a switching circuit that is controlled to turn on for a time duration controlled by asps comparison of a coefficient data signal to a ramp signal to generate the analog signal dependent on the computational weight. The ramp signal is generated using a reference current derived from a reference memory cell.

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