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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 7, 2014
Date of Patent
August 7, 2018
Patent Application Number
14454509
Patent Citations Received
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US Patent 11380838 Magnetic memory devices with layered electrodes and methods of fabrication
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US Patent 10930332 Memory array with individually trimmable sense amplifiers
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US Patent 10971680 Multi terminal device stack formation methods
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US Patent 11621293 Multi terminal device stack systems and methods
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US Patent 10347314 Method and apparatus for bipolar memory write-verify
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US Patent 10360962 Memory array with individually trimmable sense amplifiers
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US Patent 10360964 Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
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US Patent 10366774 Device with dynamic redundancy registers
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US Patent 10366775 Memory device using levels of dynamic redundancy registers for writing a data word that failed a write operation
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US Patent 10395711 Perpendicular source and bit lines for an MRAM array
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10043967
Patent Primary Examiner
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Meiya Li

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