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US Patent 10971680 Multi terminal device stack formation methods

Patent 10971680 was granted and assigned to Spin Memory on April, 2021 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
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Spin Memory
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Current Assignee
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Spin Memory
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
109716800
Patent Inventor Names
Yuan-Tung Chin0
Mustafa Pinarbasi0
Pradeep Manandhar0
Thomas Boone0
Elizabeth Dobisz0
Girish Jagtini0
Date of Patent
April 6, 2021
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Patent Application Number
161483080
Date Filed
October 1, 2018
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Patent Citations
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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements
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US Patent 10062837 Method of forming magnetic patterns, and method of manufacturing magnetic memory devices
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10134988 System for forming an electroactive layer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
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US Patent 10636840 Quaternary spin hall memory
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US Patent 10186614 Semiconductor device and manufacturing method thereof
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US Patent 10008662 Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
...
Patent Primary Examiner
Bradley Smith
Bradley Smith
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Patent abstract

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

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