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US Patent 10971680 Multi terminal device stack formation methods

Patent 10971680 was granted and assigned to Spin Memory on April, 2021 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
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Spin Memory
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Date Filed
October 1, 2018
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Date of Patent
April 6, 2021
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Patent Applicant
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Spin Memory
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Patent Application Number
16148308
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Patent Citations
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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements
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US Patent 10062837 Method of forming magnetic patterns, and method of manufacturing magnetic memory devices
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10134988 System for forming an electroactive layer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
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US Patent 10636840 Quaternary spin hall memory
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US Patent 10186614 Semiconductor device and manufacturing method thereof
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US Patent 10008662 Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
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US Patent 10026609 Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
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US Patent 10038137 MRAM device and method for fabricating the same
•••
Patent Inventor Names
Yuan-Tung Chin
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Mustafa Pinarbasi
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Pradeep Manandhar
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Thomas Boone
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Elizabeth Dobisz
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Girish Jagtini
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10971680
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Patent Primary Examiner
Bradley Smith
Bradley Smith
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