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US Patent 10032792 Semiconductor device and manufacturing method thereof

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

October 30, 2017

Date of Patent

July 24, 2018

Patent Application Number

15798120

Patent Citations Received

US Patent 11242598 Structures including metal carbide material, devices including the structures, and methods of forming same

US Patent 11286562 Gas-phase chemical reactor and method of using same

US Patent 11286558 Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

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US Patent 11289326 Method for reforming amorphous carbon polymer film

US Patent D947913 Susceptor shaft

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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures

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US Patent 11227782 Vertical batch furnace assembly

US Patent 11227789 Method and apparatus for filling a recess formed within a substrate surface

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US Patent 10229833 Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

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Patent Inventor Names

Seung Woo Choi

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Yong Min Yoo

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Young Jae Kim

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Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

Joseph C. Nicely

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