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Felisa C. Hiteshew

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Edits on 14 Dec, 2021
"Remove inverse infobox"
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Golden AI
edited on 14 Dec, 2021
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Infobox (-98 properties)
Infobox
Patent primary examiner of
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US Patent 7252713 Mesoporous glass as nucleant for macromolecule crystallisation
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US Patent 7291221 Electromagnetic pumping of liquid silicon in a crystal growing process
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US Patent 7323051 One hundred millimeter single crystal silicon carbide wafer
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US Patent 7374614 Method for manufacturing single crystal semiconductor
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US Patent 7374741 Method for growing silicon single crystal and silicon wafer
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US Patent 7378071 Silicon wafer and method for producing silicon single crystal
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US Patent 7378128 Crucible for the crystallization of silicon
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US Patent 7381266 Sapphire crystal growth method
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US Patent 7381392 Silicon feedstock for solar cells
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US Patent 7384477 Method for producing a single crystal and a single crystal
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US Patent 7387679 Silicon carbide single crystal and method and apparatus for producing the same
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US Patent 7390359 Nitride semiconductor wafer
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US Patent 7390361 Semiconductor single crystal manufacturing apparatus and graphite crucible
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US Patent 7393412 Method for manufacturing compound semiconductor epitaxial substrate
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US Patent 7396404 Methods for forming alkali halide ingots into rectangular plates
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US Patent 7396406 Single crystal semiconductor manufacturing apparatus and method
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US Patent 7396410 Featuring forming methods to reduce stacking fault nucleation sites
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US Patent 7399358 Synthesis of large homoepitaxial monocrystalline diamond
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US Patent 7404858 Method for epitaxial growth of silicon carbide
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US Patent 7407547 Liquid-phase growth apparatus and method
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US Patent 7410540 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
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US Patent 7413609 Semiconductor single crystal manufacturing apparatus
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US Patent 7416604 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
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US Patent 7416605 Anneal of epitaxial layer in a semiconductor device
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US Patent 7416606 Method of forming a layer of silicon carbide on a silicon wafer
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US Patent 7419545 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
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US Patent 7419547 Method for marking a crystalline material using cathodoluminescence
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US Patent 7422632 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate
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US Patent 7427325 Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
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US Patent 7427326 Minimizing degradation of SiC bipolar semiconductor devices
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US Patent 7431765 Process for preparing single crystal silicon having improved gate oxide integrity
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US Patent 7431767 Apparatus and method for growth of a thin film
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US Patent 7431768 System for performing crystallization trials
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US Patent 7431769 Method for performing crystallization trials
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US Patent 7435294 Method for manufacturing silicon single crystal, and silicon wafer
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US Patent 7435295 Method for producing compound single crystal and production apparatus for use therein
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US Patent 7435296 Diamond bodies grown on SiC substrates and associated methods
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US Patent 7435397 System for performing crystallization trials
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US Patent 7438762 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
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US Patent 7442253 Process for forming low defect density, ideal oxygen precipitating silicon
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US Patent 7442255 Crucible for a device for producing a block of crystalline material and method for producing same
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US Patent 7442355 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof
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US Patent 7445672 Method of forming group-III nitride crystal, layered structure and epitaxial substrate
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US Patent 7449063 Method and mould for casting articles with a pre-determined crystalline orientation
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US Patent 7449064 Method for producing AlN single crystal and AlN single crystal
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US Patent 7449065 Method for the growth of large low-defect single crystals
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US Patent 7449066 Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
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US Patent 7452419 Method for performing crystallization trials
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US Patent 7452420 Apparatus and method for diamond production
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US Patent 7455730 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
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US Patent 7455731 Polycrystalline silicon rod and method for processing the same
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US Patent 7459023 Method for producing semiconductor crystal
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US Patent 7459025 Methods for transferring a layer onto a substrate
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US Patent 7459026 Light irradiation apparatus, crystallization apparatus, crystallization method and device
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US Patent 7462238 Crystal growth apparatus and method of producing a crystal
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US Patent 7465353 Method for growing epitaxial crystal
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US Patent 7465355 Method and device for producting monocrystals
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US Patent 7470323 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon
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US Patent 7470326 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
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US Patent 7473314 Method for growing silicon single crystal
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US Patent 7473317 Crystal growth crucible
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US Patent 7476274 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal
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US Patent 7481880 Mask and method for crystallizing amorphous silicon
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US Patent 7491270 Heat shield member and single crystal pulling device
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US Patent 7494545 Epitaxial deposition process and apparatus
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US Patent 7494546 Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
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US Patent 7497906 Seed crystal fixing apparatus and a method for fixing the seed crystal
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US Patent 7510690 System for performing crystallization trials
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US Patent 7517406 Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
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US Patent 7520932 Method of analyzing carbon concentration in crystalline silicon
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US Patent 7524371 Method for manufacturing defect-free silicon single crystal
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US Patent 7524376 Method and apparatus for aluminum nitride monocrystal boule growth
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US Patent 7534296 Electrically conductive diamond electrodes
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US Patent 7537658 Method for producing epitaxial silicon wafer
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US Patent 7540919 Solidification of crystalline silicon from reusable crucible molds
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US Patent 7545847 Frequency synthesizer applied to frequency hopping system
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US Patent 7547359 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
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US Patent 7547360 Reduction of carbon inclusions in sublimation grown SiC single crystals
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US Patent 7553368 Process for manufacturing a gallium rich gallium nitride film
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US Patent 7553373 Silicon carbide single crystal and production thereof
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US Patent 7563320 Hydrothermal method for preparing large single crystals of scandium, yttrium, and lanthanide sesquioxides
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US Patent 7572333 Method for manufacturing semiconductor device
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US Patent 7572335 Crystallization apparatus and crystallization method
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US Patent 7588637 Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards
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US Patent 7588638 Single crystal pulling apparatus
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US Patent 7591895 Method and apparatus for producing crystals
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US Patent 7597756 Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon
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US Patent 7601215 Method for rapid, controllable growth and thickness, of epitaxial silicon films
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US Patent 7604696 Method of making a solar grade silicon wafer
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US Patent 7604698 Cooling structure for body of crystal-growing furnace
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US Patent 7608145 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
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US Patent 7608146 Method and apparatus for the production of crystalline silicon substrates
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US Patent 7611580 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
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US Patent 7641734 Method for producing silicon single crystal
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US Patent 7658798 Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof
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US Patent 7662231 Cord rotating head for a crystal drawing system
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US Patent 7704325 Crystal forming apparatus and method for using same
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US Patent 7708833 Crystal growing apparatus
Edits on 4 Dec, 2021
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Golden AI
edited on 4 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
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US Patent 7708833 Crystal growing apparatus
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Golden AI
edited on 4 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
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US Patent 7704325 Crystal forming apparatus and method for using same
Edits on 3 Dec, 2021
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Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7662231 Cord rotating head for a crystal drawing system
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7641734 Method for producing silicon single crystal
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7608146 Method and apparatus for the production of crystalline silicon substrates
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7604698 Cooling structure for body of crystal-growing furnace
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7604696 Method of making a solar grade silicon wafer
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7601215 Method for rapid, controllable growth and thickness, of epitaxial silicon films
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7591895 Method and apparatus for producing crystals
Edits on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Golden AI profile picture
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7588638 Single crystal pulling apparatus
Golden AI profile picture
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7572335 Crystallization apparatus and crystallization method
Golden AI profile picture
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7572333 Method for manufacturing semiconductor device
Golden AI profile picture
Golden AI
edited on 2 Dec, 2021
Golden AI profile picture
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
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US Patent 7553373 Silicon carbide single crystal and production thereof

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