US Patent 7553373 Silicon carbide single crystal and production thereof

A method of producing a silicon carbide single crystal, having:fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; andsublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.