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US Patent 9865581 Method of fabricating multi-substrate semiconductor devices

Patent 9865581 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on January, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 13, 2015
Date of Patent
January 9, 2018
Patent Application Number
14940621
Patent Citations Received
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US Patent 12136605 Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics and method for forming the same
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US Patent 11955445 Metal pads over TSV
0
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US Patent 12009323 Semiconductor structure
0
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US Patent 12125784 Interconnect structures
0
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US Patent 11749645 TSV as pad
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US Patent 11756880 Interconnect structures
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US Patent 11804377 Method for preparing a surface for direct-bonding
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US Patent 11929347 Mixed exposure for large die
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9865581
Patent Primary Examiner
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Julia Slutsker

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