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US Patent 11929347 Mixed exposure for large die

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119293470
Patent Inventor Names
Belgacem Haba0
Javier A. Delacruz0
Date of Patent
March 12, 2024
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Patent Application Number
175792590
Date Filed
January 19, 2022
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Patent Citations
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US Patent 11011494 Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
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US Patent 11296044 Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
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US Patent 11296053 Direct bonded stack structures for increased reliability and improved yield in microelectronics
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US Patent 11329034 Direct-bonded LED structure contacts and substrate contacts
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US Patent 11348898 Systems and methods for releveled bump planes for chiplets
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US Patent 11355404 Mitigating surface damage of probe pads in preparation for direct bonding of a substrate
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US Patent 11355443 Dielets on flexible and stretchable packaging for microelectronics
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US Patent 11367652 Microelectronic assembly from processed substrate
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...
Patent Primary Examiner
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Elias Ullah
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CPC Code
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H01L 2224/08225
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H01L 2924/15192
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H01L 2924/15311
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G03F 7/70433
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G03F 7/70458
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G03F 7/70466
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G03F 7/203
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H01L 24/97
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...
Patent abstract

Techniques and arrangements for performing exposure operations on a wafer utilizing both a stepper apparatus and an aligner apparatus. The exposure operations are performed with respect to large composite base dies, e.g., interposers, defined within the wafer, where the interposers will become a part of microelectronic devices by coupling with active dies or microchips. The composite base dies may be coupled to the active dies via “native interconnects” utilizing direct bonding techniques. The stepper apparatus may be used to perform exposure operations on active regions of the composite base dies to provide a fine pitch for the native interconnects, while the aligner apparatus may be used to perform exposure operations on inactive regions of the composite base dies to provide a coarse pitch for interfaces with passive regions of the composite base dies.

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