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US Patent 9837285 Etching method

Patent 9837285 was granted and assigned to Tokyo Electron on December, 2017 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Tokyo Electron
Tokyo Electron
Date Filed
July 30, 2015
Date of Patent
December 5, 2017
Patent Applicant
Tokyo Electron
Tokyo Electron
Patent Application Number
14813353
Patent Citations Received
‌
US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
‌
US Patent 12125673 Pulsed voltage source for plasma processing applications
0
‌
US Patent 12111341 In-situ electric field detection method and apparatus
0
‌
US Patent 11776788 Pulsed voltage boost for substrate processing
‌
US Patent 11967483 Plasma excitation with ion energy control
0
‌
US Patent 11972924 Pulsed voltage source for plasma processing applications
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9837285
Patent Primary Examiner
‌
Sheikh Maruf

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