US Patent 9806252 Dry plasma etch method to pattern MRAM stack
Patent 9806252 was granted and assigned to Lam Research on October, 2017 by the United States Patent and Trademark Office.
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Patent abstract
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.
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Patent Inventor Names
Jeffrey Marks0
Samantha Tan0
Taeseung Kim0
Thorsten Lill0
Wenbing Yang0
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US Patent 09806252 Dry plasma etch method to pattern MRAM stack US Patent 9806252 Dry plasma etch method to pattern MRAM stack
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Patent Number
098062520
Patent Number
98062520
Edits on 25 Mar, 2023
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
098062520
Date of Patent
October 31, 2017
0Patent Application Number
147492910
Date Filed
June 24, 2015
0Patent Primary Examiner
Edits on 15 Jan, 2022
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US Patent 09806252 Dry plasma etch method to pattern MRAM stack
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09806252
Date of patent
October 31, 2017
Patent application number
14749291
Date Filed
June 24, 2015
Patent primary examiner
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