US Patent 9777378 Advanced process flow for high quality FCVD films
Patent 9777378 was granted and assigned to Applied Materials on October, 2017 by the United States Patent and Trademark Office.
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Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.
US Patent 09777378 Advanced process flow for high quality FCVD films US Patent 9777378 Advanced process flow for high quality FCVD films
US Patent 09777378 Advanced process flow for high quality FCVD films
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