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US Patent 9754768 Plasma processing method and plasma processing apparatus

Patent 9754768 was granted and assigned to Tokyo Electron on September, 2017 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Tokyo Electron
Tokyo Electron
Date Filed
December 3, 2012
Date of Patent
September 5, 2017
Patent Applicant
Tokyo Electron
Tokyo Electron
Patent Application Number
14363382
Patent Citations Received
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US Patent 12125673 Pulsed voltage source for plasma processing applications
0
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
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US Patent 12111341 In-situ electric field detection method and apparatus
0
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US Patent 12125674 Surface charge and power feedback and control using a switch mode bias system
0
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US Patent 11776788 Pulsed voltage boost for substrate processing
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US Patent 11842884 Spatial monitoring and control of plasma processing environments
0
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US Patent 11887812 Bias supply with a single controlled switch
0
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US Patent 11887813 Pulsed voltage source for plasma processing
0
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US Patent 11942309 Bias supply with resonant switching
0
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US Patent 11967483 Plasma excitation with ion energy control
0
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9754768
Patent Primary Examiner
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Binh X Tran

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