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US Patent 9362107 Flowable low-k dielectric gapfill treatment

Patent 9362107 was granted and assigned to Applied Materials on June, 2016 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Applied Materials
Applied Materials
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Date Filed
September 30, 2014
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Date of Patent
June 7, 2016
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Patent Applicant
Applied Materials
Applied Materials
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Patent Application Number
14502492
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Patent Citations Received
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US Patent 11881411 High pressure annealing process for metal containing materials
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US Patent 11694912 High pressure and high temperature anneal chamber
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US Patent 11705337 Tungsten defluorination by high pressure treatment
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US Patent 11749555 Semiconductor processing system
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US Patent 11756786 Forming high carbon content flowable dielectric film with low processing damage
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US Patent 11756803 Gas delivery system for high pressure processing chamber
Patent Inventor Names
Sanjay Kamath
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Abhijit Basu Mallick
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Kiran V. Thadani
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9362107
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Patent Primary Examiner
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Yasser A Abdelaziez
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