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US Patent 9245752 Method for etching atomic layer of graphene

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
January 22, 2014
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Date of Patent
January 26, 2016
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Patent Application Number
14161050
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Patent Citations Received
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US Patent 11942306 Atomic layer etching by electron wavefront
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US Patent 11664195 DC plasma control for electron enhanced material processing
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US Patent 11676797 DC plasma control for electron enhanced material processing
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US Patent 11688588 Electron bias control signals for electron enhanced material processing
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US Patent 11715623 DC plasma control for electron enhanced material processing
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US Patent 11869747 Atomic layer etching by electron wavefront
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US Patent 11887823 Electron bias control signals for electron enhanced material processing
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Patent Inventor Names
Geun Young Yeom
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Jong Sik Oh
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Kyung Seok Min
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Woong Sun Lim
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Yi Yeon Kim
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9245752
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Patent Primary Examiner
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Duy Deo
0

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