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US Patent 9245752 Method for etching atomic layer of graphene

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Patent Citations Received
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US Patent 11942306 Atomic layer etching by electron wavefront
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US Patent 11887823 Electron bias control signals for electron enhanced material processing
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US Patent 11869747 Atomic layer etching by electron wavefront
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Patent abstract

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

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Patent Inventor Names
Geun Young Yeom0
Jong Sik Oh0
Kyung Seok Min0
Woong Sun Lim0
Yi Yeon Kim0
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US Patent 11715623 DC plasma control for electron enhanced material processing
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US Patent 11688588 Electron bias control signals for electron enhanced material processing
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US Patent 11676797 DC plasma control for electron enhanced material processing
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US Patent 11664195 DC plasma control for electron enhanced material processing
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=092457520
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US Patent 09245752 Method for etching atomic layer of graphene US Patent 9245752 Method for etching atomic layer of graphene

Infobox
Patent Number
092457520
Patent Number
92457520
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
092457520
Date of Patent
January 26, 2016
0
Patent Application Number
141610500
Date Filed
January 22, 2014
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=092457520
Patent Primary Examiner
‌
Duy Deo
0
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09245752
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 US Patent 09245752 Method for etching atomic layer of graphene

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09245752
Date of patent
January 26, 2016
Patent application number
14161050
Date Filed
January 22, 2014
Patent primary examiner
‌
Duy Deo

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