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Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 8, 2015
0Patent Application Number
138499630
Date Filed
March 25, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.
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