US Patent 9157730 PECVD process
Patent 9157730 was granted and assigned to Applied Materials on October, 2015 by the United States Patent and Trademark Office.
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A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
US Patent 09157730 PECVD process US Patent 9157730 PECVD process
US Patent 09157730 PECVD process
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