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US Patent 9101038 Electrostatic chuck including declamping electrode and method of declamping

Patent 9101038 was granted and assigned to Lam Research on August, 2015 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Lam Research
Lam Research
Current Assignee
Lam Research
Lam Research
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9101038
Date of Patent
August 4, 2015
Patent Application Number
14136826
Date Filed
December 20, 2013
Patent Citations Received
‌
US Patent 12125673 Pulsed voltage source for plasma processing applications
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0
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
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US Patent 12111341 In-situ electric field detection method and apparatus
0
‌
US Patent 11776789 Plasma processing assembly using pulsed-voltage and radio-frequency power
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US Patent 11791138 Automatic electrostatic chuck bias compensation during plasma processing
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US Patent 11887813 Pulsed voltage source for plasma processing
0
‌
US Patent 11948780 Automatic electrostatic chuck bias compensation during plasma processing
0
...
Patent Primary Examiner
‌
Dharti Patel
Patent abstract

A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a support surface in a layer of ceramic material on which the semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode embedded in the layer of ceramic material, the at least one electrostatic clamping electrode operable to apply an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, and at least one declamping electrode embedded in the layer of ceramic material above the at least one electrostatic clamping electrode operable to provide a path for draining any residual charge between the wafer and the support surface when the electrostatic clamping voltage is no longer applied to the clamping electrode.

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