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US Patent 8440508 Hydrogen barrier for ferroelectric capacitors

Patent 8440508 was granted and assigned to Texas Instruments on May, 2013 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
Texas Instruments
Texas Instruments
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
84405080
Patent Inventor Names
Manoj K. Jain0
Kezhakkedath R. Udayakumar0
Scott R. Summerfelt0
Ted S. Moise0
Date of Patent
May 14, 2013
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Patent Application Number
127186910
Date Filed
March 5, 2010
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Patent Citations Received
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US Patent 12108608 Memory devices with dual encapsulation layers and methods of fabrication
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US Patent 11996438 Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication
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US Patent 12010854 Multi-level hydrogen barrier layers for memory applications and methods of fabrication
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US Patent 12016185 Planar and trench capacitors for logic and memory applications
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US Patent 12022662 Planar and trench capacitors for logic and memory applications and methods of fabrication
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US Patent 12029043 Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication
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US Patent 12069866 Pocket integration process for embedded memory
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US Patent 12108607 Devices with continuous electrode plate and methods of fabrication
0
...
Patent Primary Examiner
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Daniel Luke
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Patent abstract

An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for at least partially enclosing a FeCap array with hydrogen barrier walls and a hydrogen barrier top plate.

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