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US Patent 8250417 Method for detecting flash program failures

Patent 8250417 was granted and assigned to Micron Technology on August, 2012 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
Micron Technology
Micron Technology
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8250417
Patent Inventor Names
Samuel A. Shapero0
Wanmo Wong0
Brady Keays0
Peter S. Feeley0
Theodore T. Pekny0
Date of Patent
August 21, 2012
Patent Application Number
12353878
Date Filed
January 14, 2009
Patent Citations Received
‌
US Patent 11670342 Recovery of memory from asynchronous power loss
0
‌
US Patent 11776590 On-the-fly programming and verifying method for memory cells based on counters and ECC feedback
Patent Primary Examiner
‌
Phung M Chung
Patent abstract

One or more techniques are provided for programming a flash memory device. In one embodiment, the memory device is programmed such that a data pattern written to a page in the memory device has encoded therein an expected count value corresponding to the number of times a first binary value occurs in the data pattern. The data pattern includes the program data and the expected count value, and is written to the page in a single operation. The expected count value may be stored in a count field in the management area of the page. During a page read operation, the expected count value is compared to the actual count of the number of bits having the first binary value in the data area of the page. If the expected count is equal to the actual count, then the program data is determined to be valid.

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