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US Patent 7952083 Ion beam system and machining method

Patent 7952083 was granted and assigned to Hitachi on May, 2011 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
Hitachi
Hitachi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
79520830
Patent Inventor Names
Yoshinori Nakayama0
Masaki Hasegawa0
Muneyuki Fukuda0
Satoshi Tomimatsu0
Hiroyasu Shichi0
Date of Patent
May 31, 2011
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Patent Application Number
120201500
Date Filed
January 25, 2008
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Patent Citations Received
‌
US Patent 11703460 Methods and systems for optical surface defect material characterization
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Patent Primary Examiner
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Bernard E Souw
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Patent abstract

An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.

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