US Patent 7928587 Power semiconductor module
Patent 7928587 was granted and assigned to Hitachi on April, 2011 by the United States Patent and Trademark Office.
All edits
Edits on 27 Nov, 2023
Golden AI
Edits made to:
Article (+367 characters)
Article
Patent abstract
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
Edits on 19 Sep, 2023
Golden AI
Edits made to:
Infobox (+5 properties)
Infobox
Patent Inventor Names
Akihiro Tamba0
Hirokazu Inoue0
Kazuhiro Suzuki0
Koji Sasaki0
Shinji Hiramitsu0
Edits on 21 Jul, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 14 Jul, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07928587 Power semiconductor module US Patent 7928587 Power semiconductor module
Infobox
Patent Number
07928587
Patent Number
7928587
Edits on 19 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 7 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07928587 Power semiconductor module
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07928587
Date of patent
April 19, 2011
Patent application number
12105553
Date Filed
April 18, 2008
Patent primary examiner
Find more entities like US Patent 7928587 Power semiconductor module
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
By using this site, you agree to our Terms of Service.