US Patent 7898844 Magnetic tunnel junction and memristor apparatus
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Patent abstract
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
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Patent Inventor Names
Alan Wang0
Hai Li0
Haiwen Xi0
Hongyue Liu0
Wenzhong Zhu0
Xiaobin Wang0
Yiran Chen0
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US Patent 07898844 Magnetic tunnel junction and memristor apparatus US Patent 7898844 Magnetic tunnel junction and memristor apparatus
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Patent Number
07898844
Patent Number
7898844
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US Patent 07898844 Magnetic tunnel junction and memristor apparatus
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Is a
Patent jurisdiction
Patent number
07898844
Date of patent
March 1, 2011
Patent application number
12367966
Date Filed
February 9, 2009
Patent primary examiner
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