Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alan Wang0
Wenzhong Zhu0
Xiaobin Wang0
Yiran Chen0
Hai Li0
Haiwen Xi0
Hongyue Liu0
Date of Patent
March 1, 2011
Patent Application Number
12367966
Date Filed
February 9, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
