US Patent 7863164 Method of growing GaN using CVD and HVPE
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Patent abstract
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
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Patent Inventor Names
Mitch M. C. Chou0
Wen-Ching Hsu0
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US Patent 07863164 Method of growing GaN using CVD and HVPE US Patent 7863164 Method of growing GaN using CVD and HVPE
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Patent Number
078631640
Patent Number
78631640
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Patent Jurisdiction
Patent Number
078631640
Date of Patent
January 4, 2011
0Patent Application Number
118089310
Date Filed
June 13, 2007
0Official Website
Patent Primary Examiner
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US Patent 07863164 Method of growing GaN using CVD and HVPE
Infobox
Is a
Patent jurisdiction
Patent number
07863164
Date of patent
January 4, 2011
Patent application number
11808931
Date Filed
June 13, 2007
Patent primary examiner
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