Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wen-Ching Hsu0
Mitch M. C. Chou0
Date of Patent
January 4, 2011
0Patent Application Number
118089310
Date Filed
June 13, 2007
0Patent Primary Examiner
Patent abstract
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
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