US Patent 7824962 Method of integrated circuit fabrication
Patent 7824962 was granted and assigned to Infineon Technologies on November, 2010 by the United States Patent and Trademark Office.
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A method for fabricating an integrated circuit including forming a first trench in a rear side of a semiconductor wafer, wherein the first trench has a depth extending partially through a thickness of the semiconductor wafer, coating the rear side with a layer of coating material, including filling the first trench with the coating material, and forming a second trench in a front side of the semiconductor wafer, wherein the second trench is aligned with and has a width less than a width of the first trench, and wherein the second trench has a depth extending at least through a remaining portion of the semiconductor wafer so as to be in communication with the coating material filling the first trench.
US Patent 07824962 Method of integrated circuit fabrication US Patent 7824962 Method of integrated circuit fabrication
US Patent 07824962 Method of integrated circuit fabrication
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