US Patent 7786528 Metal schemes of trench MOSFET for copper bonding
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Patent abstract
A trench MOSFET with improved metal schemes is disclosed. The improved contact structure applies a buffer layer to minimize the bonding damage to semiconductor when bonding copper wire upon front source and gate metal without additional cost.
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US Patent 07786528 Metal schemes of trench MOSFET for copper bonding US Patent 7786528 Metal schemes of trench MOSFET for copper bonding
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Patent Number
0778652800
Patent Number
778652800
Edits on 29 Mar, 2023
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Patent Jurisdiction
Patent Number
077865280
Date of Patent
August 31, 2010
0Patent Application Number
123189880
Date Filed
January 14, 2009
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
077865280
Date of Patent
August 31, 2010
0Patent Application Number
123189880
Date Filed
January 14, 2009
0Official Website
Patent Primary Examiner
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US Patent 07786528 Metal schemes of trench MOSFET for copper bonding
Infobox
Is a
Patent jurisdiction
Patent number
07786528
Date of patent
August 31, 2010
Patent application number
12318988
Date Filed
January 14, 2009
Patent primary examiner
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