Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 31, 2010
Patent Application Number
12318988
Date Filed
January 14, 2009
Patent Primary Examiner
Patent abstract
A trench MOSFET with improved metal schemes is disclosed. The improved contact structure applies a buffer layer to minimize the bonding damage to semiconductor when bonding copper wire upon front source and gate metal without additional cost.
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