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US Patent 7776715 Reverse construction memory cell

Patent 7776715 was granted and assigned to Micron Technology on August, 2010 by the United States Patent and Trademark Office.

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US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12094892 3D micro display device and structure
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US Patent 12094829 3D semiconductor device and structure
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US Patent 12080743 Multilevel semiconductor device and structure with image sensors and wafer bonding
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US Patent 12068187 3D semiconductor device and structure with bonding and DRAM memory cells
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US Patent 12027518 3D semiconductor devices and structures with metal layers
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US Patent 12016181 3D semiconductor device and structure with logic and memory
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US Patent 11991884 3D semiconductor device and structure with logic and memory
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US Patent 11984445 3D semiconductor devices and structures with metal layers
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edited on 15 May, 2024
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US Patent 11984438 Multilevel semiconductor device and structure with oxide bonding
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US Patent 11978731 Method to produce a multi-level semiconductor memory device and structure
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edited on 24 Apr, 2024
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US Patent 11967583 3D semiconductor device and structure with metal layers
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US Patent 11961827 3D semiconductor device and structure with metal layers
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Edits on 10 Apr, 2024
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edited on 10 Apr, 2024
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US Patent 11956952 Semiconductor memory device and structure
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Edits on 21 Mar, 2024
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edited on 21 Mar, 2024
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US Patent 11935949 3D semiconductor device and structure with metal layers and memory cells
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edited on 21 Mar, 2024
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US Patent 11937422 Semiconductor memory device and structure
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