Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 1, 2010
Patent Application Number
12131704
Date Filed
June 2, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.
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