US Patent 7652329 Vertical MOS transistor and method therefor
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Patent abstract
In one embodiment, a vertical MOS transistor is formed without a thick field oxide and particularly without a thick field oxide in the termination region of the transistor.
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Patent Inventor Names
Prasad Venkatraman0
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Official Website
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US Patent 07652329 Vertical MOS transistor and method therefor US Patent 7652329 Vertical MOS transistor and method therefor
Infobox
Patent Number
076523290
Patent Number
76523290
Edits on 26 Sep, 2022
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Patent Jurisdiction
Patent Number
076523290
Date of Patent
January 26, 2010
0Patent Application Number
117778930
Date Filed
July 13, 2007
0Official Website
Patent Primary Examiner
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US Patent 07652329 Vertical MOS transistor and method therefor
Infobox
Is a
Patent jurisdiction
Patent number
07652329
Date of patent
January 26, 2010
Patent application number
11777893
Date Filed
July 13, 2007
Patent primary examiner
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