Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Prasad Venkatraman0
Date of Patent
January 26, 2010
0Patent Application Number
117778930
Date Filed
July 13, 2007
0Patent Primary Examiner
Patent abstract
In one embodiment, a vertical MOS transistor is formed without a thick field oxide and particularly without a thick field oxide in the termination region of the transistor.
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