US Patent 7608195 High aspect ratio contacts
Patent 7608195 was granted and assigned to Micron Technology on October, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Aaron R. Wilson0
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Patent abstract
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch reactor, and exposing the insulating layer to a plasma of the first gaseous etchant. Use of the first gaseous etchant reduces the occurrence of twisting in openings in insulating layers having an aspect ratio of at least 15:1.
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US Patent 07608195 High aspect ratio contacts US Patent 7608195 High aspect ratio contacts
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Patent Number
076081950
Patent Number
76081950
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Current Assignee
Patent Jurisdiction
Patent Number
076081950
Date of Patent
October 27, 2009
0Patent Application Number
113586590
Date Filed
February 21, 2006
0Official Website
Patent Primary Examiner
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US Patent 07608195 High aspect ratio contacts
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07608195
Date of patent
October 27, 2009
Patent application number
11358659
Date Filed
February 21, 2006
Patent primary examiner
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