US Patent 7608195 High aspect ratio contacts

Patent 7608195 was granted and assigned to Micron Technology on October, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

76081950

Patent Inventor Names

Aaron R. Wilson0

Date of Patent

October 27, 2009

Patent Application Number

113586590

Date Filed

February 21, 2006

Patent Primary Examiner

‌

Anita K Alanko

Patent abstract

A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch reactor, and exposing the insulating layer to a plasma of the first gaseous etchant. Use of the first gaseous etchant reduces the occurrence of twisting in openings in insulating layers having an aspect ratio of at least 15:1.