US Patent 7601587 Fabricating method of CMOS

Patent 7601587 was granted and assigned to United Microelectronics Corporation on October, 2009 by the United States Patent and Trademark Office.

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Patent Inventor Names

Min-Chieh Yang0

Pei-Yu Chou0

Wen-Han Hung0

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Patent abstract

A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=07601587

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