Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Pei-Yu Chou0
Wen-Han Hung0
Min-Chieh Yang0
Date of Patent
October 13, 2009
Patent Application Number
11924571
Date Filed
October 25, 2007
Patent Primary Examiner
Patent abstract
A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.
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