Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 6, 2009
Patent Application Number
10934081
Date Filed
September 3, 2004
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.
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