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US Patent 7582412 Multilayer photoresist systems

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Patent Citations Received
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US Patent 11935756 Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
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Patent Inventor Names
Dana A. Gronbeck0
George G. Barclay0
James F. Cameron0
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Patent abstract

Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist. Preferred underlayer compositions comprise one or more resins or other components that impart etch-resistant and antireflective properties, such as one or more resins that contain phenyl or other etch-resistant groups and anthracene or other moieties that are effective anti-reflective chromophores for photoresist exposure radiation.

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US Patent 07582412 Multilayer photoresist systems US Patent 7582412 Multilayer photoresist systems

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Patent Number
075824120
Patent Number
75824120
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=075824120
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Infobox
Is a
Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
075824120
Date of Patent
September 1, 2009
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Patent Application Number
107179750
Date Filed
November 20, 2003
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=075824120
Patent Primary Examiner
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Amanda C. Walke
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07582412
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 US Patent 07582412 Multilayer photoresist systems

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07582412
Date of patent
September 1, 2009
Patent application number
10717975
Date Filed
November 20, 2003
Patent primary examiner
‌
Amanda C. Walke

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